ADH-ALH444S

RECOMMENDED FOR NEW DESIGNS

1 GHz to 12 GHz, Low Noise Amplifier

Part Models: 1
1ku List Price: Starting From $708.40

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Overview

Noise Figure: 1.75 dB @ 10 GHz
Gain: 17 dB
P1dB Output Power: +19 dBm @ 5 GHz

Supply Voltage: +5V @ 55 mA
Die Size: 2.64 mm x 1.64 mm x 0.1 mm
Screened in accordance with MIL-PRF-38534, Class K

The ADH-ALH444S is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 GHz and 12 GHz. The amplifier provides 17dB of gain, 1.5dB noise figure and +19 dBm of output power at 1dB gain compression while requiring only 55 mA from a +5V supply voltage.

Applications

Wideband Communication Systems
Point-to-Point Radios
Point-to-Multi-Point Radios
Test Instrumentation
VSAT
Military & Space

Part Models: 1
1ku List Price: Starting From $708.40

Documentation

Application Note 2

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-2622: Selecting an Analog Devices RF Low Noise Amplifier 09/04/2025

Controlled Drawings 1

HMC8532: 1 GHz to 12 GHz, Low Noise Amplifier SID (Rev.A) 12/04/2024

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC8532	DIE	Material Declaration Reliability Report Package Resources	Ultra Librarian SamacSys

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