HMC8415
Info : RECOMMENDED FOR NEW DESIGNS
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HMC8415

40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 3
1ku List Price
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Features
  • High output power: 46 dBm typical at PIN = 23 dBm
  • High small signal gain: 32.5 dB typical
  • High power gain: 23 dB typical at PIN = 23 dBm
  • Frequency range: 9 GHz to 10.5 GHz
  • High power added efficiency: 40% typical at PIN = 23 dBm
  • Supply voltage: VDDxA/VDDxB = 28 V at 1000 mA
  • 6 mm × 6 mm, 40-lead LFSCP
Additional Details
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The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.

The HMC8415LP6GE is ideal for pulsed applications, such as wireless weather, marine, and military radar applications.

APPLICATIONS

  • Weather radars
  • Marine radars
  • Military radars
Part Models 3
1ku List Price
price unavailable

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Documentation

Documentation

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Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC8415A
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HMC8415LP6GE
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HMC8415LP6GETR
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Software & Part Ecosystem

Software & Part Ecosystem

Evaluation Kit

Evaluation Kits 2

EVAL-HMC8415

HMC8415 Evaluation Board

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EVAL-HMC8415

HMC8415 Evaluation Board

HMC8415 Evaluation Board

Product Detail

The EV1HMC8415LP6G evaluation board consists of a two layer PCB fabricated from 10 mil thick Rogers 4350B copper clad or equivalent, mounted to an aluminum heat spreader. The heat spreader assists in providing thermal relief to the part as well as mechanical support to the PCB. Mounting holes on the heat spreader allow it to be easily attached to larger heat sinks for improved thermal management. The RFIN and RFOUT ports are populated by 2.9 mm female coaxial connectors and their respective RF traces are of 50 ohm characteristic impedance. The board is populated with components suitable for use over the entire Operating Temperature range of the part. Because the HMC8415LP6GE is intended for pulsed DC bias operation, a separate drain pulser PCB is provided to simplify evaluation without the need to create a custom pulser. The drain pulser PCB has four layers and is fabricated from Isola 370HR or equivalent. For information regarding the required connections, DC biasing via the drain pulser, and typical performances, refer to the HMC8415LP6GE data sheet.

Resources

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Detail

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

Tools & Simulations

Tools & Simulations 3

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