HMC8205
Info : RECOMMENDED FOR NEW DESIGNS
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HMC8205

0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 3
1ku List Price
price unavailable
Features

HMC8205BF10 Features

  • High PSAT: 46 dBm
  • High power gain: 20 dB
  • High PAE: 38%
  • Instantaneous bandwidth: 0.3 GHz to 6 GHz
  • Supply voltage: VDD = 50 V at 1300 mA
  • 10-lead LDCC package

HMC8205BCHIPS Features

  • High output power: 45.5 dBm typical at PIN = 24 dBm
  • High power gain: 22 dB typical at PIN = 24 dBm
  • High PAE: 40% typical at PIN = 28 dBm
  • Die size: 4.8 mm × 3.4 mm × 0.1 mm
Additional Details
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The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.

The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.

The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).

The HMC8205BCHIPS is a gallium nitride (GaN), broadband power amplifier that delivers 45.5 dBm (35 W) with 40% power added efficiency (PAE) across an instantaneous bandwidth of 0.4 GHz to 6 GHz. No external matching is required to achieve full band operation. No external inductor is required to bias the amplifier. In addition, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BCHIPS.

The HMC8205BCHIPS is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.

APPLICATIONS

  • Military jammers
  • Commercial and military radar
  • Power amplifier stage for wireless infrastructure 
  • Test and measurement equipment
Part Models 3
1ku List Price
price unavailable

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Documentation

Documentation

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Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC8205BCHIPS
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HMC8205BF10-50
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Part Models

Product Lifecycle

PCN

Dec 12, 2017

- 17_0199

Change in First Level Packaging for HMC1086F10, HMC1087F10, HMC8205BF10.

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Part Models

Product Lifecycle

PCN

Dec 12, 2017

- 17_0199

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Change in First Level Packaging for HMC1086F10, HMC1087F10, HMC8205BF10.

Software & Part Ecosystem

Software & Part Ecosystem

Evaluation Kit

Evaluation Kits 2

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EVAL-HMC8205

HMC8205 Evaluation Board

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EVAL-HMC8205

HMC8205 Evaluation Board

HMC8205 Evaluation Board

Product Detail

The EV1HMC8205BF10 evaluation board is a two layer PCB fabricated using 10 mil thick Rogers 4350B copper clad. The PCB is mounted to a copper heat spreader which assists in providing thermal relief to the part as well as mechanical support to the PCB. Mounting holes allow for easy attachment to larger heat sinks for improved thermal management. The RFIN and RFOUT ports are populated by 2.9 mm female coaxial connectors and their respective RF traces have a 50 ohm characteristic impedance. The board is populated with components suitable for use over the entire Operating Temperature range of the part. Please refer to the HMC8205 data sheet for information regarding DC connections, biasing, and typical performance.

Resources

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Detail

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

Tools & Simulations

Tools & Simulations 3

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