HMC7885

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2 GHz to 6 GHz, 45 dBm Power Amplifier

Data Sheet (Rev. 0) Product Selection Table
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Overview

  • 2 GHz to 6 GHz
  • 21 dB typical small signal gain
  • 45 dBm typical saturated RF output power (POUT)
  • 18-lead, hermetically sealed module
  • −30°C to +60°C operating temperature

The HMC7885 is a 32 W gallium nitride (GaN), monolithic microwave integrated circuit (MMIC) power amplifier (PA) module that operates between 2 GHz and 6 GHz, and is provided in an 18-lead hermetically sealed module. The amplifier typically provides 21 dB of small signal gain and 45 dBm of saturated radio frequency (RF) output power. The amplifier draws 2200 mA of quiescent current (IDD) from a 28 V dc supply. The RF input and output are dc blocked and matched to 50 Ω for ease of use.

Applications

  • Test and measurement equipment
  • Communications
  • Electronic warfare (EW)
  • Military
  • Traveling wave tube (TWT) replacements
  • SATCOM
  • Commercial and military radars
HMC7885
2 GHz to 6 GHz, 45 dBm Power Amplifier
HMC7885 Functional Block Diagram HMC7885 Pin Configuration
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Documentation

Data Sheet 1

Application Note 3

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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Evaluation Kits

eval board
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schematic 6
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schematic 8
ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Details

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.
EVAL-HMC7885
HMC7885 Evaluation Board
EV1HMC7885FH18ANGLE-web EV1HMC7885FH18BOTTOM-web EV1HMC7885FH18TOP-web
ADPULSERPLUSEBZ
Pulser Plus Reference Design for GaN PA Biasing and Sequencing
ADPULSERPLUSEBZ Angle View ADPULSERPLUSEBZ Bottom View ADPULSERPLUSEBZ Top View ADPULSERPLUSEBZ Pulser Plus Block Diagram ADPULSERPLUSEBZ Drain Pulsed Mode Block Diagam

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