HMC7441
GaAs pHEMT MMIC 2 Watt Power Amplifier, 27.5 - 31 GHz
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Features
- Saturated Output Power:
+34 dBm @ 25% PAE - High Output IP3: +38 dBm
- High Gain: 23 dB
- DC Supply: +6V @ 1000 mA
- No External Matching Required
- Die Size: 3.18 x 2.84 x 0.1 mm
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The HMC7441 is a three-stage GaAs pHEMT Power Amplifier which operates between 27.5 and 31 GHz. The amplifier provides 23 dB of gain and +34 dBm of saturated output power at 25% PAE from a 6V supply. With an excellent output IP3 of +38 dBm, the HMC7441 is ideal for linear applications such as Ka-band VSAT or high capacity point-to-point or point-to-multi-point radios demanding +34 dBm of efficient saturated output power. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data taken with the chip in a 50 Ohm test fixture connected via (1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.
Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT & SATCOM
- Military & Space
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HMC7441
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
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| HMC7441 | CHIPS OR DIE |
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| HMC7441-SX | CHIPS OR DIE |
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