HMC7229LS6

PRODUCTION

GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz

Data Sheet (Rev. E) Product Selection Table

Part Models: 2
1ku List Price: price unavailable

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Overview

32 dBm typical saturated output power (P_SAT) at 18% power added efficiency (PAE) at 39 GHz
P1dB compression output power: 31.5 dBm typical
High output third-order intercept (IP3): 40 dBm typical
High gain: 24 dB typical
50 Ω matched input/output
Ceramic, 6 mm × 6 mm, high frequency, air cavity package

The HMC7229LS6 is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier, with an integrated temperature compensated on-chip power detector that operates between 37 GHz to 40 GHz. The HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated output power at 18% PAE at 39 GHz from a 6 V supply. With an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear applications such as high capacity, point to point or multipoint radios or VSAT/SATCOM applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The HMC7229LS6 is housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity package that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.

Applications

Point to point radios
Point to multipoint radios
Very small aperture terminal (VSAT) and satellite communications (SATCOM)

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC7229LS6: GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Data Sheet (Rev.E) 06/27/2016

Application Note 4

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC7229LS6	CER LDLESS CHIP W/HEATSINK	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC7229LS6TR	CER LDLESS CHIP W/HEATSINK	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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