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HMC659LC5

PRODUCTION

Power Amplifier SMT, DC - 15 GHz

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Overview

  • P1dB Output Power: +27.5 dBm
  • Gain: 19 dB
  • Output IP3: +35 dBm
  • Supply Voltage: +8V @ 300 mA
  • 50 Ohm Matched Input/Output
  • 32 Lead Ceramic 5x5mm
    SMT Package: 25mm²

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.

Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.

Applications

  • Telecom Infrastructure
  • Microwave Radio & VSAT
  • Military & Space
  • Test Instrumentation
  • Fiber Optics

HMC659LC5
Power Amplifier SMT, DC - 15 GHz
HMC659LC5_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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Evaluation Kits

EVAL-HMC659LC5
HMC659LC5 Evaluation Board

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