HMC455

RECOMMENDED FOR NEW DESIGNS

½ Watt High IP3 Amplifier SMT, 1.7 - 2.5 GHz

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Overview

  • Output IP3: +42 dBm
  • Gain: 13 dB
  • 56% PAE @ +28 dBm Pout
  • +19 dBm W-CDMA Channel Power @ -45 dBc ACP
  • 3x3 mm QFN SMT Package

The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.

Applications

  • Multi-Carrier Systems 
  • GSM, GPRS & EDGE 
  • CDMA & WCDMA 
  • PHS

HMC455
½ Watt High IP3 Amplifier SMT, 1.7 - 2.5 GHz
hmc455lp3_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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Evaluation Kits

EVAL-HMC455LP3
HMC455LP3 Evaluation Board

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