Features and Benefits

  • Output IP3: +42 dBm
  • Gain: 13 dB
  • 56% PAE @ +28 dBm Pout
  • +19 dBm W-CDMA Channel Power @ -45 dBc ACP
  • 3x3 mm QFN SMT Package

Product Details

The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.


  • Multi-Carrier Systems 
  • PHS

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.