HMC413
Info: : PRODUCTION
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HMC413

Power Amplifier SMT, 1.6 - 2.2 GHz

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Info: : PRODUCTION tooltip
Info: : PRODUCTION tooltip
Part Details
Part Models 2
1ku List Price
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Features
  • Gain: 23 dB
  • Saturated Power: +29.5 dBm 42% PAE
  • Supply Voltage: +2.75V to +5V
  • Power Down Capability
  • Low External Part Count
Additional Details
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The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.

Applications

  • Cellular / PCS / 3G
  • Portable & Infrastructure
  • Wireless Local Loop
Part Models 2
1ku List Price
price unavailable

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC413QS16GE
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HMC413QS16GETR
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Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

Tools & Simulations 3

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