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HMC313

InGaP HBT Gain Block Amplifier SMT, DC - 6 GHz

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Overview

P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26

The HMC313(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313(E) offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. The “HMC313 Biasing and Impedance Matching Techniques” application note available within the “Application Notes” section offers recommendations for narrow band operation.

Applications

2.2 - 2.7 GHz MMDS
3.5 GHz Wireless Local Loop
5 - 6 GHz UNII & HiperLAN

Documentation

Data Sheet 1

HMC313/313E: GaAs InGaP HBT MMIC Broadband Amplifier Gain Block, DC - 6 GHz Data Sheet 04/22/2015

Application Note 2

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC313 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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