HMC1121

RECOMMENDED FOR NEW DESIGNS

4 W, GaAs, pHEMT, MMIC Power Amplifier, 5.5 GHz to 8.5 GHz

Data Sheet (Rev. A) Product Selection Table

Part Models: 2
1ku List Price: price unavailable

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Overview

High saturated output power (PSAT): 36.5 dBm at 30% power added efficiency (PAE)
High output third-order intercept (IP3): 44 dBm typical
High gain: 28 dB typical
High output power for 1 dB compression (P1dB): 36 dBm typical
Total supply current: 2200 mA at 7 V
40-lead, 6 mm × 6 mm LFCSP package: 36 mm2²

The HMC1121 is a three-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 4 W power amplifier with an integrated temperature compensated on-chip power detector that operates between 5.5 GHz and 8.5 GHz. The HMC1121 provides 28 dB of gain, 44 dBm output IP3, and 36.5 dBm of saturated output power at 30% PAE from a 7 V power supply.

The HMC1121 exhibits excellent linearity and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna.

Ideal for supporting higher volume applications, the HMC1121 is provided in a 40-lead LFCSP package.

Applications

Point to point radios
Point to multipoint radios
Very small aperture terminals (VSATs) and satellite communications (SATCOMs)
Military electronic warfare (EW) and electronic counter measures (ECM)

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC1121: 4 W, GaAs, pHEMT, MMIC Power Amplifier, 5.5 GHz to 8.5 GHz Data Sheet (Rev.A) 07/27/2016

Application Note 5

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-2578: Using the VREF Pin of RF Amplifier Power Detectors to Monitor Die Temperature 02/12/2024

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC1121LP6GE	40-Lead QFN (6mm x 6mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC1121LP6GETR	40-Lead QFN (6mm x 6mm w/ EP)	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC1121LP6GE S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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