HMC1114PM5E
Info : RECOMMENDED FOR NEW DESIGNS
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HMC1114PM5E

>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 2
1ku List Price
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Features
  • High small signal gain: 34.5 dB typical
  • High output power: 42 dBm typical at PIN = 18 dBm
  • High PAE: 55% typical at PIN = 18 dBm
  • Frequency range: 2.7 GHz to 3.8 GHz
  • Supply voltage: VDD = 28 V at a quiescent current of 150 mA
  • 5 mm × 5 mm, 32-lead LFCSP_CAV package
Additional Details
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TThe HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is <1 dB typical at small signal levels.

The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

Applications

  • Extended battery operation for public mobile radios
  • Power amplifier stage for wireless infrastructure
  • Test and measurement equipment
  • Commercial and military radars
  • General-purpose transmitter amplification
Part Models 2
1ku List Price
price unavailable

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Documentation

Documentation

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Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC1114PM5E
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HMC1114PM5ETR
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Product Lifecycle

PCN

Mar 19, 2021

- 20_0308

Epoxy Change at ASE Chungli Branch for PM5E and ACGZN Packages

Filter by Model

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Part Models

Product Lifecycle

PCN

Mar 19, 2021

- 20_0308

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Epoxy Change at ASE Chungli Branch for PM5E and ACGZN Packages

Software & Part Ecosystem

Software & Part Ecosystem

Evaluation Kit

Evaluation Kits 2

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EVAL-HMC1114PM5E

HMC1114PM5E Evaluation Board

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EVAL-HMC1114PM5E

HMC1114PM5E Evaluation Board

HMC1114PM5E Evaluation Board

Product Detail

Use RF circuit design techniques for the circuit board used in the application. Provide 50 Ω impedance for the signal lines and directly connect the package ground leads and exposed paddle to the ground plane. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation PCB is available from Analog Devices, Inc., upon request.

Resources

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Detail

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

Tools & Simulations

Tools & Simulations 3

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