Features and Benefits

  • OP1dB: 29 dBm typical
  • Gain: up to 15 dB typical
  • OIP3: up to 43 dBm typical
  • Self biased at VDD = 12 V at 385 mA typical with an optional bias control on VGG1 for IDQ adjustment
  • 50 Ω matched input/output
  • 32-lead, 5 mm × 5 mm LFCSP

Product Details

The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 Ω, housed in a RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.

Note that throughout this data sheet, multifunction pins, such as RFOUT/VDD, are referred to either by the entire pin name or by a single function of the pin, for example, VDD, when only that function is relevant.


  • Military and space
  • Test instrumentation

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.