HMC-APH634-DIE

Obsolete

Medium Power Amplifier Chip, 81 - 86 GHz

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Overview

High Gain: 12 dB
High P1dB: +19 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.57 x 1.70 x 0.05 mm

The HMC-APH634 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-APH634 provides 12 dB of gain, and an output power of up to +20 dBm at 1 dB compression from a +4V supply. All bond pads and the die backside are Ti/Au metallized. The HMC-APH634 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

Short Haul / High Capacity Links
Test & Measurement
E-Band Communication Systems

Documentation

Data Sheet 1

HMC-APH634 Data Sheet 04/22/2015

Application Note 3

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Hardware Ecosystem

Parts	Product Life Cycle	Description
HMC8142	RECOMMENDED FOR NEW DESIGNS	81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector

Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

Open Tool

S-Parameter 1

HMC-APH634 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.