HMC559-DIE

RECOMMENDED FOR NEW DESIGNS

Wideband Power Amplifier Chip, DC - 20 GHz

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Overview

  • P1dB Output Power: +28 dBm
  • Gain: 14 dB
  • Output IP3: +36 dBm
  • Supply Voltage: +10V @ 400 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.12 x 1.50 x 0.1 mm

The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain flatness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifier applications. The HMC559 amplifier I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).

Applications

  • Telecom Infrastructure
  • Microwave Radio & VSAT
  • Military & Space
  • Test Instrumentation
  • Fiber Optics

HMC559-DIE
Wideband Power Amplifier Chip, DC - 20 GHz
hmc559_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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