The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.
The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.
The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.
- Cellular/4G infrastructure
- Wireless infrastructure
- Mobile radios
- Test equipment
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
Product Selection Guide
RF, Microwave, and Millimeter Wave IC Selection Guide 2017
Using a unique combination of design skills, systems understanding, and process technologies, Analog Devices offers...
Semiconductor Qualification Test Report: PHEMT-J (QTR: 2013-00285)
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