Features and Benefits
- High P1dB output power: +28 dBm
- High gain: 14 dB
- High output IP3: +40 dBm
- Single supply: +10 V @ 350 mA
- 50 ohm matched input/output
- 32 lead 5x5 mm SMT package: 25 mm2
The HMC907APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, +40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907APM5E ideal for EW, ECM, Radar and test equipment applications. The HMC907APM5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
- Test instrumentation
- Military & space
Product Lifecycle Production
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
Tools & Simulations
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
The USA list pricing shown is for BUDGETARY USE ONLY, shown in United States dollars (FOB USA per unit for the stated volume), and is subject to change. International prices may differ due to local duties, taxes, fees and exchange rates. For volume-specific price or delivery quotes, please contact your local Analog Devices, Inc. sales office or authorized distributor. Pricing displayed for Evaluation Boards and Kits is based on 1-piece pricing.