ADMV7810

RECOMMENDED FOR NEW DESIGNS

81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector

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Overview

  • Gain: 20 dB typical
  • Output power for 1 dB compression: 28 dBm typical
  • Saturated output power: 29 dBm typical
  • Output third-order intercept: 33 dBm typical
  • Input return loss: 12 dB typical
  • Output return loss: 20 dB typical
  • DC supply: 4 V at 800 mA
  • No external matching required
  • Die size: 2.999 mm × 3.799 mm × 0.05 mm

The ADMV7810 is an integrated E-band gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GHz. The ADMV7810 provides 20 dB of gain, 28 dBm of output power at 1 dB compression, and 29 dBm of saturated output power at 18% power added efficiency from a 4 V power supply. The ADMV7810 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain make the device an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port. The ADMV7810 is available in a 40-pad bare die (CHIP) and operates over the −55°C to +85°C temperature range.

Applications

  • E-band communication systems
  • High capacity wireless backhaul radio systems
  • Test and measurement

ADMV7810
81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector
ADMV7810 Functional Block Diagram ADMV7810 Pin Configuration ADMV7810 Circuit Diagram
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ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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