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HMC375

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GaAs pHEMT MMIC Low Noise Amplifier, 1.7 - 2.2 GHz

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Overview

  • Noise Figure: 0.9 dB
  • Output IP3: +34 dBm
  • Gain: 17 dB
  • Very Stable Gain vs. Supply & Temperature
  • Single Supply: +5V @ 136 mA
  • 50 Ohm Matched Output

The HMC375LP3 & HMC375LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC618LP3(E).

Applications

  • GSM, GPRS & EDGE
  • CDMA & W-CDMA
  • DECT

HMC375
GaAs pHEMT MMIC Low Noise Amplifier, 1.7 - 2.2 GHz
hmc375lp3_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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