HMC8401-DIE

RECOMMENDED FOR NEW DESIGNS

DC to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier

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Overview

  • Output power for 1 dB compression (P1dB): 16.5 dBm typical
  • Saturated output power (PSAT): 19 dBm typical
  • Gain: 14.5 dB typical
  • Noise figure: 1.5 dB
  • Output third-order intercept (IP3): 26 dBm typical
  • Supply voltage: 7.5 V at 60 mA
  • 50 Ω matched input/output
  • Die size: 2.55 mm × 1.5 mm × 0.05 mm

The HMC8401 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8401 is a wideband low noise amplifier which operates between dc and 28 GHz. The amplifier provides 14.5 dB of gain, 1.5 dB noise figure, 26 dBm output IP3 and 16.5 dBm of output power at 1 dB gain compression while requiring 60 mA from a 7.5 V supply. The HMC8401 also has a gain control option, VGG2. The HMC8401 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

  • Test instrumentation
  • Microwave radios and very small aperture terminals (VSATs)
  • Military and space
  • Telecommunications infrastructure
  • Fiber optics

HMC8401-DIE

DC to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier

HMC8401 Functional Block Diagram HMC8401 Pin Configuration HMC8401 Circuit Diagram
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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 2

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