HMC9059

製造中止

GaAs MMIC I/Q Upconverter 9.5 - 13.5 GHz

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製品情報

Conversion gain: 15 dB typical
Sideband rejection: 22 dBc typical
Input power for 1 dB compression (P1dB): 5 dBm typical
Output third-order intercept (OIP3): 30 dBm typical
LO leakage at the RF output: −10 dBm typical
LO leakage at the IF input: −40 dBm typical
RF return loss: 15 dB typical
LO return loss: 10 dB typical
32-lead 5 x 5 mm LFCSP package

The HMC9059 is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant, low stress injection molded plastic LFCSP package that operates from 9.5 GHz to 13.5 GHz. This device provides a small signal conversion gain of 15 dB with 22 dBc of sideband rejection. The HMC9059 uses a radio frequency (RF) amplifier preceded by an in-phase/quadrature (I/Q) mixer, where the local oscillator (LO) is driven by a driver amplifier. IF1 and IF2 mixer inputs are provided, and an external 90° hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC9059 is a much smaller alternative to hybrid style single-sideband (SSB) upconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.

Applications