HMC669
製造中止LNA with Failsafe Bypass Mode SMT, 1700 - 2200 MHz
- 製品モデル
- 4
- 1Ku当たりの価格
- 価格は未定
製品の詳細
- Noise Figure: 1.4 dB
- Output IP3: +29 dBm
- Gain: 17 dB
- Failsafe Operation: Bypass is
enabled when LNA is unpowered - Single Supply: +3V or +5V
- 16 Lead 3x3mm SMT Package: 9mm²
The HMC669LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm IP3 from a single supply of +5V @ 86mA. Input and output return losses are excellent and no external matching components are required. A single control line is used to switch between LNA mode and a low loss bypass mode. Failsafe topology also enables the LNA bypass path when no DC power is available.
Applications
- Cellular/3G & LTE/WiMAX/4G
- BTS & Infrastructure
- Repeaters and Femtocells
- Tower Mounted Amplifiers
- Test & Measurement Equipment
ドキュメント
製造中止品のデータシート 1
ビデオ 1
品質関連資料 3
テープ&リール仕様 1
製品モデル | ピン/パッケージ図 | 資料 | CADシンボル、フットプリント、および3Dモデル |
---|---|---|---|
HMC669LP3 | 16-Lead QFN (3mm x 3mm w/ EP) | ||
HMC669LP3E | 16-Lead QFN (3mm x 3mm w/ EP) | ||
HMC669LP3ETR | 16-Lead QFN (3mm x 3mm w/ EP) | ||
HMC669LP3TR | 16-Lead QFN (3mm x 3mm w/ EP) |
製品モデル | 製品ライフサイクル | PCN |
---|---|---|
6 6, 2022 - 22_0048 Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products |
||
HMC669LP3E | 製造中止 | |
HMC669LP3ETR | 製造中止 | |
3 3, 2016 - 16_0010 Discontinuance of Select RF and Microwave Products |
||
HMC669LP3 | 製造中止 | |
HMC669LP3E | 製造中止 | |
HMC669LP3ETR | 製造中止 | |
HMC669LP3TR | 製造中止 |
これは最新改訂バージョンのデータシートです。