Features and Benefits

  • Fully Enhances N-Channel Power MOSFETs
  • 8μA Standby Current
  • 85μA ON Current
  • Short-Circuit Protection
  • Wide Power Supply Range: 4.5V to 18V
  • Controlled Switching ON and OFF Times
  • No External Charge Pump Components
  • Replaces P-Channel High Side MOSFETs
  • Compatible with Standard Logic Families
  • Available in 8-Pin SO Package

Product Details

The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.

Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.

The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required.

The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.


  • Laptop Power Bus Switching
  • SCSI Termination Power Switching
  • Cellular Phone Power Management
  • P-Channel Switch Replacement
  • Relay and Solenoid Drivers
  • Low Frequency Half H-Bridge
  • Motor Speed and Torque Control

Product Lifecycle icon-recommended Production

At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.

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