LT8418

RECOMMENDED FOR NEW DESIGNS

100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch

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Overview

  • Half-Bridge Gate Driver for GaN FETs
  • 0.6Ω Pull-Up Resistance at Top Gate Driver
  • 0.2Ω Pull-Down Resistance at Bottom Gate Driver
  • 4A Peak Source, 8A Peak Sink Current Capability
  • Smart Integrated Bootstrap Switch
  • Split-Gate-Driver to Adjust Turn-On/Turn-Off Strength
  • Default Low-State for All Driver Inputs and Outputs
  • Maximum 15V Voltage Rating at INT and INB Inputs
  • Independent INT, INB Inputs with TTL Logic Compatible
  • Fast Propagation Delay: 10ns (Typical)
  • Propagation Delay Matching: 1.5ns (Typical)
  • Balanced Driver Supply Voltage: VBST ≈ VCC = 3.85V – 5.5V
  • Undervoltage and Overvoltage Lockout Protections
  • Small 12-Ball WLCSP Package
LT8418
100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch
LT8418 Pin Configuration LT8418 Typical Application
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Tools & Simulations

LTspice 1


Models for the following parts are available in LTspice:

  • LT8418
LTspice

LTspice® is a powerful, fast and free simulation software, schematic capture and waveform viewer with enhancements and models for improving the simulation of analog circuits.


Evaluation Kits

eval board
EVAL-LT8418-AZ

100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch

Product Details

The EVAL-LT8418-AZ evaluation circuit features the LT8418 driving two 100V enhanced Gallium Nitride (eGaN) FETs in a half-bridge configuration. The circuit is optimized as a buck converter, but it can be used as a boost converter or other converter topologies consisting of a half-bridge. The evaluation circuit can deliver up to 10A with good thermal management.

An external single or two PWM signals are required to drive the board, depending on the configuration. In the single-input setup, the dead time circuitry on the board is utilized to generate the complement signal and set the dead time. The dead time circuitry is bypassed in the dual-input setup.

The LT8418 driver has powerful 0.2Ω pull-down and 0.6Ω pull-up drivers driving two 100V GaN FETs. It also integrates a smart integrated bootstrap switch to generate a balanced bootstrap voltage from VCC with a minimum dropout voltage. The LT8418 provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.

Design files for this circuit board are available.

eval board
EVAL-LT8418-BZ

100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch

Product Details

The EVAL-LT8418-BZ evaluation circuit features the LT8418 driving two 100V enhanced Gallium Nitride (eGaN) FETs in a half-bridge configuration. The circuit is optimized as a buck converter, but it can be used as a boost converter or other converter topologies consisting of a half-bridge. The evaluation circuit can deliver up to 10A with good thermal management.

An external single or two PWM signals are required to drive the board, depending on the configuration. In the single-input setup, the dead time circuitry on the board is utilized to generate the complement signal and set the dead time. The dead time circuitry is bypassed in the dual-input setup. The LT8418 driver has powerful 0.2Ω pull-down and 0.6Ω pull-up drivers driving two 100V GaN FETs. It also integrates a smart integrated bootstrap switch to generate a balanced bootstrap voltage from VCC with a minimum dropout voltage. The LT8418 provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.

EVAL-LT8418-AZ
100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch
EVAL-LT8418-AZ Board Photo Angle View EVAL-LT8418-AZ Board Photo Top View EVAL-LT8418-AZ Board Photo Bottom View
EVAL-LT8418-BZ
100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch
EVAL-LT8418 Board Photo Angle View EVAL-LT8418 Board Photo Top View EVAL-LT8418 Board Photo Bottom View

Reference Designs

ADPS30146-RD Power Tree
ADPS30146-RD Industrial Power Solution Circuits from the lab

High‑Efficiency GaN Motor Drive Control Solution for BLDC and Servo Motors

Features and Benefits

  • Compact GaN servo drive with integrated gate drive and sensing
  • Accurate current sensing improves torque regulation and dynamic response
  • Adjustable 25–100 kHz PWM with fine dead time control for low-noise efficiency
  • GaN efficiency removes need for external cooling
  • Small PCB footprint with optional LC/LCL filtering for clean output and motor integration
  • Compatible with multiple controllers, supporting 50–750 W across diverse motor types

Electrical Requirements:

  • Input Voltage: 48–58 V battery source
  • Output Voltage: 50–750 W
  • Board V1 Output: Conventional GaN switching waveform
  • Board V2 Output: Sine wave output generated through LC/LCL filtering

Control & Feedback Requirements:

  • PWM Frequency: 25–100 kHz
  • PWM Tuning Parameters: Switching frequency and dead time adjustment
  • Current Sensing Method: In-line sensing, two-phase measurement (U and W)
  • Scalability: Configurable sense resistor and amplifier gain

Mechanical Requirements:

  • PCB Size: 40 × 50 mm
  • Setup Variations: Extended cable connection between driver board and motor. Driver board mechanically integrated within the motor assembly
  • Thermal Constraints: Passive cooling only (no heatsink and no forced airflow)
  • Motor Load: MINAS A6 48 V, 400 W (MSMD04BL1S). Hollow shaft BLDC motors

Protection Requirements:

  • Provision for DC bus back EMF energy dissipation
ADPS30146-RD Industrial Power Solution
High‑Efficiency GaN Motor Drive Control Solution for BLDC and Servo Motors
ADPS30146-RD Power Tree
ADPS30146-RD EVB 3D View Image
ADPS30146-RD EVB Top View Image
ADPS30146-RD EVB Bottom View Image

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