HMC8120
Info : RECOMMENDED FOR NEW DESIGNS
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HMC8120

71 GHz to 76 GHz, E-Band Variable Gain Amplifier

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 2
1ku List Price
price unavailable
Features
  • Gain: 22 dB typical
  • Wide gain control range: 15 dB typical
  • Output third-order intercept (OIP3): 30 dBm typical
  • Output power for 1 dB compression (P1dB): 21 dBm typical 
  • Saturated output power (PSAT): 22 dBm typical
  • DC supply: 4 V at 250 mA 
  • No external matching required 
  • Die size: 3.599 mm × 1.369 mm × 0.05 mm
Additional Details
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The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC) variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSAT while requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.05 mil thick × 7 mil long ribbon on each port.

Applications

  • E-band communication systems
  • High capacity wireless backhaul radio systems
  • Test and measurement
Part Models 2
1ku List Price
price unavailable

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC8120
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HMC8120-SX
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Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

Tools & Simulations 1

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