HMC797

Obsolete

HMC797 / HMC797LP5E

1-Watt Power Amplifier Chip or SMT, DC to 22 GHz

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Overview

  • High P1dB output power: +28 dBm
  • High PSAT output power: +29.5 dBm, +31 dBm
  • High gain: 13.5 dB, 14.5 dB
  • High output IP3: +39 dBm, +40 dBm
  • Supply voltage: +10 V at 400 mA
  • 50 Ω matched input/output
  • Die size: 2.89 × 1.55 × 0.1 mm
  • 32-lead, 5 × 5 mm, surface-mount technology (SMT) package

The HMC797 devices are GaAs, monolithic microwave integrated circuit (MMIC), and PHEMT distributed power amplifiers which operate between dc and 22 GHz. These amplifiers provide up to 13.5 dB or 14.5 dB of gain, +39 dBm or +40 dBm of output IP3, and +28 dBm of output power at 1 dB gain compression, while requiring 400 mA from a +10 V supply. These versatile power amplifiers exhibit a positive gain slope from dc to 22 GHz, making them ideal for EW, ECM, radar, and test equipment applications. The inputs/outputs of these devices are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All chip data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length. The power amplifier SMT is packaged in a leadless, QFN, 5 × 5 mm, surface-mount package and requires no external matching components.

Applications

  • Test instrumentation
  • Microwave radio and VSAT
  • Military and space
  • Telecom infrastructure
  • Fiber optics

HMC797

HMC797 / HMC797LP5E

1-Watt Power Amplifier Chip or SMT, DC to 22 GHz

HMC797_fbl HMC797LP5_fbl
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Documentation

Data Sheet 2

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC797APM5E GaAs pHEMT MMIC 1 Watt Power Amplifier, DC - 22 GHz
HMC797A-Die GaAs pHEMT MMIC 1 Watt Power Amplifier, DC - 22 GHz
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Tools & Simulations


Evaluation Kits

EVAL-HMC797LP5E
HMC797LP5E Evaluation Board

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