HMC7229-DIE

33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W Power Amplifier with Power Detector

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Overview

  • 32 dBm PSAT with 22% PAE
  • P1dB POUT: 31.5 dBm
  • High OIP3: 39.5 dBm
  • High gain: 24.5 dB
  • 50 Ω matched input/output

The HMC7229 is a four-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier with an integrated temperature compensated on-chip power detector, operating between 33 GHz and 40 GHz. The HMC7229 provides a typical range of 23 dB to 24.5 dB of gain and a range of 30 dBm to 32 dBm of saturated output power (PSAT) with 12% to 22% (typical) power added efficiency (PAE) range across a band of 33 GHz to 40 GHz from a 6 V supply. With an excellent OIP3 with a range of 37 dBm to 39.5 dBm across a band of 33 GHz to 40 GHz, the HMC7229 is ideal for linear applications such as high capacity point to point or point to multipoint radios or very small aperture terminal (VSAT)/satellite communications (SATCOM) applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/output ports are internally matched and dc blocked for easy integration into higher level assemblies.

Applications

  • Point to point radios
  • Point to multipoint Radio
  • VSAT and SATCOM

HMC7229-DIE
33 GHz to 40 GHz, GaAs, pHEMT, MMIC, 1 W Power Amplifier with Power Detector
HMC7229chips Functional Block Diagram HMC7229chips Pin Configuration HMC7229 Circuit Diagram
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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

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