HMC633-Die

PRODUCTION

GaAs PHEMT MMIC Driver Amplifier, 5 - 17 GHz

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Overview

  • Gain: 29 dB
  • P1dB: +23 dBm
  • Output IP3: +30 dBm
  • Saturated Power: +24 dBm @ 27% PAE
  • Supply Voltage: +5V @ 180 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 2.07 x 0.93 x 0.1 mm

The HMC633 is a GaAs MMIC PHEMT Driver Amplifier die which operates between 5 and 17 GHz. The amplifier provides up to 31 dB of gain, +30 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC633 is an ideal driver amplifier for microwave radio applications from 5 to 17 GHz, and may also be biased at +5V, 130 mA to provide 2 dB lower gain with improved PAE. The HMC633 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via one 1 mil wedge bond with minimal length of 0.31 mm (12 mils).

Applications

  • Point-to-Point Radios
  • Point-to-Multi-Point Radios & VSAT
  • LO Driver for Mixers
  • Military & Space

HMC633-Die

GaAs PHEMT MMIC Driver Amplifier, 5 - 17 GHz

HMC633_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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