HMC618

Obsolete

GaAs SMT pHEMT Low Noise Amplifier SMT, 1.2 - 2.2 GHz

Data Sheet Product Selection Table
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Overview

  • Noise Figure: 0.75 dB
  • Gain: 19 dB
  • Output IP3: 36 dBm
  • Single Supply: +3V to +5V
  • 50 Ohm Matched Input/Output
  • 16 Lead 3x3mm QFN Package: 9 mm²

The HMC618LP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).

Applications

  • Cellular/3G and LTE/4G
  • BTS & Infrastructure
  • Repeaters and Femtocells
  • Public Safety Radio

Suggested Replacement Parts

HMC618A RECOMMENDED FOR NEW DESIGNS

GaAs SMT pHEMT Low Noise Amplifier, 1.2 - 2.2 GHz

HMC618

GaAs SMT pHEMT Low Noise Amplifier SMT, 1.2 - 2.2 GHz

hmc618lp3_fbl
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Documentation

Application Note 1

Evaluation Design File 1

Obsolete Data Sheet 1

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC618A
RECOMMENDED FOR NEW DESIGNS GaAs SMT pHEMT Low Noise Amplifier, 1.2 - 2.2 GHz
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Tools & Simulations

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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