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Features
- Noise Figure: 0.75 dB
- Gain: 19 dB
- Output IP3: 36 dBm
- Single Supply: +3V to +5V
- 50 Ohm Matched Input/Output
- 16 Lead 3x3mm QFN Package: 9 mm²
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The HMC618LP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).
Applications
- Cellular/3G and LTE/4G
- BTS & Infrastructure
- Repeaters and Femtocells
- Public Safety Radio
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HMC618
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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC618LP3ETR |
16-Lead QFN (3mm x 3mm w/ EP)
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- HMC618LP3ETR
- Pin/Package Drawing
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16-Lead QFN (3mm x 3mm w/ EP)
- Documentation
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HTML
Material Declaration
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HTML
Reliablity Data
- CAD Symbols, Footprints, and 3D Models
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SamacSys
Software & Part Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
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RECOMMENDED FOR NEW DESIGNS |
GaAs SMT pHEMT Low Noise Amplifier, 1.2 - 2.2 GHz |
Tools & Simulations 1
Sys-Parameter
