HMC457

RECOMMENDED FOR NEW DESIGNS

1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz

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Overview

  • Output IP3: +46 dBm
  • Gain: 27 dB @ 1900 MHz
    48% PAE @ +32 dBm Pout
  • +25 dBm W-CDMA Channel Power @ -50 dBc ACPR
  • Integrated Power Control (Vpd)
  • QSOP16G SMT Package: 29.4 mm²
  • Included in the HMC-DK002 Designer’s Kit

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.

Applications

  • CDMA & W-CDMA 
  • GSM, GPRS & Edge 
  • Base Stations & Repeaters

HMC457
1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz
hmc457qs16g_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1


Evaluation Kits

EVAL-HMC457QS16G
HMC457QS16G Evaluation Board.

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