Features and Benefits
- Output IP3: +46 dBm
- Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
- +25 dBm W-CDMA Channel Power @ -50 dBc ACPR
- Integrated Power Control (Vpd)
- QSOP16G SMT Package: 29.4 mm²
- Included in the HMC-DK002 Designer’s Kit
The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.
- CDMA & W-CDMA
- GSM, GPRS & Edge
- Base Stations & Repeaters
Product Lifecycle Not Recommended for New Designs
This designates products ADI does not recommend broadly for new designs.
Evaluation Kits (1)
Tools & Simulations
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Product Selection Guide (1)
Tape & Reel Specification (1)
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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.