HMC455
Info : RECOMMENDED FOR NEW DESIGNS
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HMC455

½ Watt High IP3 Amplifier SMT, 1.7 - 2.5 GHz

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Models 2
1ku List Price
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Features
  • Output IP3: +42 dBm
  • Gain: 13 dB
  • 56% PAE @ +28 dBm Pout
  • +19 dBm W-CDMA Channel Power @ -45 dBc ACP
  • 3x3 mm QFN SMT Package
Additional Details
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The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.

Applications

  • Multi-Carrier Systems 
  • GSM, GPRS & EDGE 
  • CDMA & WCDMA 
  • PHS
Part Models 2
1ku List Price
price unavailable

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Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC455LP3E
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HMC455LP3ETR
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Product Lifecycle

PCN

Mar 29, 2023

- 22_0048

Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products

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Mar 29, 2023

- 22_0048

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Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products

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