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- Output IP3: +42 dBm
- Gain: 13 dB
- 56% PAE @ +28 dBm Pout
- +19 dBm W-CDMA Channel Power @ -45 dBc ACP
- 3x3 mm QFN SMT Package
The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.
Applications
- Multi-Carrier Systems
- GSM, GPRS & EDGE
- CDMA & WCDMA
- PHS
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HMC455
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Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
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HMC455LP3E | 16-Lead QFN (3mm x 3mm w/ EP) |
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HMC455LP3ETR | 16-Lead QFN (3mm x 3mm w/ EP) |
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- HMC455LP3E
- Pin/Package Drawing
- 16-Lead QFN (3mm x 3mm w/ EP)
- Documentation
- HTML Material Declaration
- HTML Reliablity Data
- CAD Symbols, Footprints, and 3D Models
- Ultra Librarian
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- HMC455LP3ETR
- Pin/Package Drawing
- 16-Lead QFN (3mm x 3mm w/ EP)
- Documentation
- HTML Material Declaration
- HTML Reliablity Data
- CAD Symbols, Footprints, and 3D Models
- Ultra Librarian
- SamacSys
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PCN
Mar 29, 2023
- 22_0048
Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products
HMC455LP3E
PRODUCTION
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PRODUCTION
Filter by Model
Part Models
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PCN
Mar 29, 2023
- 22_0048
Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products
HMC455LP3E
PRODUCTION
HMC455LP3ETR
PRODUCTION
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Evaluation Kits 1
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