HMC452QS16G
Info: : PRODUCTION
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HMC452QS16G

1 Watt Power Amplifier SMT, 0.4 - 2.2 GHz

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Info: : PRODUCTION tooltip
Info: : PRODUCTION tooltip
Part Models 2
1ku List Price
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Features
  • Output IP3: +48 dBm
  • 22.5 dB Gain @ 400 MHz
  • 9 dB Gain @ 2100 MHz
  • 53% PAE @ +31 dBm Pout
  • +24 dBm CDMA2000
    Channel Power@ -45 dBc ACP
  • Single +5V Supply
  • Integrated Power Control (VPD)
  • QSOP16G SMT Package: 29.4 mm²
Additional Details
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The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.

Applications

  • GSM, GPRS & EDGE 
  • CDMA & W-CDMA 
  • CATV/Cable Modem 
  • Fixed Wireless & WLL
Part Models 2
1ku List Price
price unavailable

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Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC452QS16GE
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HMC452QS16GETR
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Software & Part Ecosystem

Evaluation Kits 1

Tools & Simulations 3

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