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- Output IP3: +48 dBm
- 22.5 dB Gain @ 400 MHz
- 9 dB Gain @ 2100 MHz
- 53% PAE @ +31 dBm Pout
- +24 dBm CDMA2000
Channel Power@ -45 dBc ACP - Single +5V Supply
- Integrated Power Control (VPD)
- QSOP16G SMT Package: 29.4 mm²
The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.
Applications
- GSM, GPRS & EDGE
- CDMA & W-CDMA
- CATV/Cable Modem
- Fixed Wireless & WLL
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HMC452QS16G
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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
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HMC452QS16GE | 16 ld QSOP_EP |
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HMC452QS16GETR | 16 ld QSOP_EP |
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- HMC452QS16GE
- Pin/Package Drawing
- 16 ld QSOP_EP
- Documentation
- HTML Material Declaration
- HTML Reliablity Data
- CAD Symbols, Footprints, and 3D Models
- Ultra Librarian
- SamacSys
- HMC452QS16GETR
- Pin/Package Drawing
- 16 ld QSOP_EP
- Documentation
- HTML Material Declaration
- HTML Reliablity Data
- CAD Symbols, Footprints, and 3D Models
- Ultra Librarian
- SamacSys
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Evaluation Kits 1
EVAL-HMC452QS16G
HMC452QS16G Evaluation Board
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