HMC441-Die

PRODUCTION

GaAs pHEMT MMIC Medium Power Amplifier, 6 - 18 GHz

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Overview

  • Gain: 15.5 dB
  • Saturated Power: +22 dBm @ 23% PAE
  • Single Supply Voltage:
    • +5V w/ Optional Gate Bias
  • 50 Ohm Matched Input/Output
  • Die Size: 0.94 x 0.94 x 0.1 mm

The HMC441 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 6 and 18 GHz. The amplifier provides 15.5 dB of gain, +22 dBm of saturated power, and 23% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. The HMC441 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. The backside of the die is both RF and DC ground, simplifying the assembly process and reducing performance variation. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).

Applications

  • Point-to-Point and Point-to-Multi-Point Radios
  • VSAT
  • LO Driver for HMC Mixers
  • Military EW & ECM

HMC441-Die
GaAs pHEMT MMIC Medium Power Amplifier, 6 - 18 GHz
HMC441_fbl
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Documentation

Data Sheet

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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