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Features
- Gain: 23 dB
- Saturated Power: +29.5 dBm 42% PAE
- Supply Voltage: +2.75V to +5V
- Power Down Capability
- Low External Part Count
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The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.
Applications
- Cellular / PCS / 3G
- Portable & Infrastructure
- Wireless Local Loop
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HMC413
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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC413QS16GE |
16 ld QSOP_EP
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| HMC413QS16GETR |
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- HMC413QS16GE
- Pin/Package Drawing
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16 ld QSOP_EP
- Documentation
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HTML
Material Declaration
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HTML
Reliablity Data
- CAD Symbols, Footprints, and 3D Models
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Ultra Librarian
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SamacSys
- HMC413QS16GETR
- Pin/Package Drawing
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16 ld QSOP_EP
- Documentation
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HTML
Material Declaration
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HTML
Reliablity Data
- CAD Symbols, Footprints, and 3D Models
-
Ultra Librarian
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SamacSys
Software & Part Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
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RECOMMENDED FOR NEW DESIGNS |
½ Watt High IP3 Amplifier SMT, 0.4 - 2.5 GHz |
Evaluation Kits 1
EVAL-HMC413QS16G
HMC413QS16G Evaluation Board
Product Detail
Resources
Evaluation Kits1
Tools & Simulations 3
Sys-Parameter
ADIsimRF
S-Parameter 1
S-Parameter
