½ Watt High IP3 Amplifier SMT, 0.4 - 2.5 GHz
Features and Benefits
- Gain: 23 dB
- Saturated Power: +29.5 dBm 42% PAE
- Supply Voltage: +2.75V to +5V
- Power Down Capability
- Low External Part Count
The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.
- Cellular / PCS / 3G
- Portable & Infrastructure
- Wireless Local Loop
Product Lifecycle Not Recommended for New Designs
This designates products ADI does not recommend broadly for new designs.
Application Notes (3)
Tools & Simulations
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Product Selection Guide (1)
Quality Documentation (4)
Tape & Reel Specification (1)
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
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