HMC408
Info : RECOMMENDED FOR NEW DESIGNS
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HMC408

1 Watt Power Amplifier SMT, 5.1 - 5.9 GHz

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 2
1ku List Price
price unavailable
Features
  • Gain: 20 dB
  • Saturated Power:
    +32.5 dBm @ 27% PAE
  • Single Supply Voltage: +5V
  • Power Down Capability
  • 3x3 mm Leadless SMT Package
Additional Details
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The HMC408LP3(E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.

Applications

  • 802.11a & HiperLAN WLAN
  • UNII & Pt-to-Pt / Multi-Point Radios
  • Access Point Radios
Part Models 2
1ku List Price
price unavailable

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC408LP3E
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HMC408LP3ETR
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Product Lifecycle

PCN

Apr 19, 2022

- 22_0048

Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products

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PCN

Apr 19, 2022

- 22_0048

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Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products

Software & Part Ecosystem

Software & Part Ecosystem

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