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HMC383-Die

PRODUCTION

Medium Power Amplifier Chip, 12 - 30 GHz

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Overview

  • Gain: 16 dB
  • Saturated Output Power: +18 dBm
  • Output IP3: +25 dBm
  • Single Positive Supply:
    +5V @ 101 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 2.26 x 1.35 x 0.1 mm

The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifier which operates between 12 and 30 GHz. The amplifier provides 16 dB of gain and +18 dBm of saturated power from a +5V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifier approach in multiple radio bands. The HMC383 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its compact size, single supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).

Applications

  • Point-to-Point Radios 
  • Point-to-Multi-Point Radios & VSAT 
  • Test Equipment & Sensors 
  • LO Driver for HMC Mixers 
  • Military & Space

HMC383-Die
Medium Power Amplifier Chip, 12 - 30 GHz
HMC383_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

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