HMC327
Info : RECOMMENDED FOR NEW DESIGNS
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HMC327

MMIC Power Amplifier SMT, 3 - 4 GHz

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Models 2
1ku List Price
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Features
  • Gain: 21 dB
  • Saturated Power: +30 dBm
  • 45% PAE
  • Supply Voltage: +5V
  • Power Down Capability
  • Low External Part Count
Additional Details
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The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.

Applications

  • Wireless Local Loop
Part Models 2
1ku List Price
price unavailable

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Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC327MS8GE
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  • HTML
HMC327MS8GETR
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Product Lifecycle

PCN

May 6, 2019

- 19_0063

Assembly Site Transfer of Select MSOP and SOIC_N E-pad Devices to Carsem Malaysia

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Part Models

Product Lifecycle

PCN

May 6, 2019

- 19_0063

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Assembly Site Transfer of Select MSOP and SOIC_N E-pad Devices to Carsem Malaysia

Software & Part Ecosystem

Tools & Simulations 3

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