HMC326
Info : RECOMMENDED FOR NEW DESIGNS
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HMC326

GaAs InGaP HBT Driver Amplifier SMT, 3.0 - 4.5 GHz

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Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Models 4
1ku List Price
price unavailable
Features
  • Psat Output Power: +26 dBm
  • > 40% PAE
  • Output IP3: +36 dBm
  • High Gain: 21 dB
  • Vs: +5V
  • Ultra Small Package: MSOP8G
Additional Details
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The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.

Applications

  • Microwave Radios
  • Broadband Radio Systems
  • Wireless Local Loop Driver Amplifier
Part Models 4
1ku List Price
price unavailable

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Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC326MS8G
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HMC326MS8GE
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HMC326MS8GETR
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HMC326MS8GTR
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Product Lifecycle

PCN

May 6, 2019

- 19_0063

Assembly Site Transfer of Select MSOP and SOIC_N E-pad Devices to Carsem Malaysia

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Part Models

Product Lifecycle

PCN

May 6, 2019

- 19_0063

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Assembly Site Transfer of Select MSOP and SOIC_N E-pad Devices to Carsem Malaysia

Software & Part Ecosystem

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