Features and Benefits
- P1dB Output Power: +14 dBm
- Output IP3: +27 dBm
- Gain: 17 dB
- Single Supply: +5V
- High Reliability GaAs HBT Process
- Ultra Small Package: SOT26
The HMC313(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that operates from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313(E) offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. The “HMC313 Biasing and Impedance Matching Techniques” application note available within the “Application Notes” section offers recommendations for narrow band operation.
- 2.2 - 2.7 GHz MMDS
- 3.5 GHz Wireless Local Loop
- 5 - 6 GHz UNII & HiperLAN
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Tools & Simulations
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Product Selection Guide (1)
Quality Documentation (4)
Tape & Reel Specification (1)
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.