Overview

Features and Benefits

  • High gain: 24 dB
  • P1dB output power: 25 dBm, typical
  • Single 15 V supply
  • Hermetically sealed
  • Field replaceable SMA connector
  • −40°C to +75°C operating temperature range

Product Details

The HMC-C582 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transfer (pHEMT) power amplifier in a miniature, hermetic module with replaceable SMA connectors that operates between 0.01 GHz and 20 GHz. The amplifier provides typically 24 dB of gain, up to 36 dBm output IP3, and up to 26 dBm of output power at 1 dB gain compression.

Gain flatness is excellent from 0.01 GHz to 20 GHz, making the HMC-C582 ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, fiber optic, and test equipment applications. The wideband amplifier inputs/outputs (I/Os) are internally matched to 50 Ω and are dc blocked. Integrated voltage regulators allow flexible biasing and sequencing control for robust operation.

Applications

  • Telecommunications infrastructure
  • Microwave radios and VSATs
  • Military and space
  • Test and measurement
  • Fiber optics

Product Lifecycle icon-not-recommended Last Time Buy

All products in this family will be obsolete soon. Please contact ADI Sales or Distributors to arrange for final purchases and read our Obsolescence Information to review the time periods for placing final orders and receiving final shipments.

Design Resources

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well.  "Zero defects" for shipped products is always our goal.

PCN-PDN Information

Sample & Buy


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