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HMC-C026 Data Sheet4/22/2015
Overview
Features and Benefits
- Gain: 30 dB @ 8 GHz
- P1dB Output Power: +26 dBm @ 8 GHz
- Noise Figure: 2.5 dB @ 8 GHz
- Spurious-Free Operation
- Regulated Supply and Bias Sequencing
- Hermetically Sealed Module
- Field Replaceable SMA connectors
- -55 to +85°C Operating Temperature
Product Details
The HMC-C026 is a GaAs MMIC PHEMT Distributed Power Amplifier in a miniature, hermetic module with replaceable SMA connectors which operates between 2 and 20 GHz. The amplifier provides 30 dB of gain, 2.5 dB noise figure, +30 dBm output IP3 and up to +26 dBm of output power at 1 dB gain compression.
The wideband amplifier I/Os are internally matched to 50 Ohms and are DC blocked making the HMC-C026 ideal for EW, ECM RADAR and test equipment applications. Integrated voltage regulators allow for flexible biasing of both the negative and positive supply pins, while internal bias sequencing circuitry assures robust operation.
Typical Applications
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
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Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.View our quality and reliability program and certifications for more information.
Part Number | Material Declaration | Reliability Data | Pin/Package Drawing | CAD Symbols, Footprints & 3D Models |
---|---|---|---|---|
HMC-C026 | Material Declaration | Reliability Data | Connectorized Hermetic Module (C3B) | |
Wafer Fabrication Data |
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