HMC-AUH320-DIE

NOT RECOMMENDED FOR NEW DESIGNS

Medium Power Amplifier Chip, 71 - 86 GHz

Data Sheet Product Selection Table
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Overview

  • Gain: 16 dB @ 76 GHz
  • P1dB: +15 dBm
  • Supply Voltage: +4V
  • 50 Ohm Matched Input/Output
  • Die Size: 2.20 x 0.87 x 0.1 mm

The HMC-AUH320 is a high dynamic range, four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 71 and 86 GHz. The HMC-AUH320 provides 16 dB of gain at 74 GHz, and an output power of +15 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.

The HMC-AUH320 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

  • Short Haul / High Capacity Links
  • Wireless LAN Bridges
  • Automotive Radar
  • Military & Space
  • E-Band Communication Systems
HMC-AUH320-DIE
Medium Power Amplifier Chip, 71 - 86 GHz
hmc-auh320_fbl
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Documentation

Data Sheet 1

Application Note 3

Technical Articles 1

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC8142
RECOMMENDED FOR NEW DESIGNS 81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector
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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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