Features and Benefits
- Output IP3: +39 dBm
- P1dB: +30.5 dBm
- Gain: 17 dB
- Supply Voltage: +5V
- 50 Ohm Matched Input/Output
- Die Size: 4.49 x 1.31 x 0.1 mm
The HMC-APH518 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 21 and 24 GHz. The HMC-APH518 provides 17 dB of gain, and an output power of +30.5 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
The HMC-APH518 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Tools & Simulations
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.