Part Details
Part Models 2
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Features
  • Output IP3: +35 dBm
  • P1dB: +26 dBm
  • Gain: 20 dB
  • Supply Voltage: +5V
  • 50 Ohm Matched Input/Output
  • Die Size: 3.76 x 0.92 x 0.1 mm
Additional Details
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The HMC-APH510 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 37 and 40 GHz. The HMCAPH510 provides 20 dB of gain, and an output power of +26 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.

The HMC-APH510 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Military & Space
Part Models 2
1ku List Price
price unavailable

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC-APH510
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HMC-APH510-SX
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Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

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