New Content (1)
Overview
Features and Benefits
- 2 A peak output current (<2 Ω RDSON)
- 2.5 V to 6.5 V input
- 4.5 V to 35 V output
- Undervoltage lockout (UVLO) at 2.5 V VDD1
- Multiple UVLO options on VDD2
- Grade A: 4.4 V (typical) UVLO on VDD2
- Grade B: 7.3 V (typical) UVLO on VDD2
- Grade C: 11.3 V (typical) UVLO on VDD2
- Precise timing characteristics
- 53 ns maximum isolator and driver propagation delay
- CMOS input logic levels
- High junction temperature operation: 125°C
- High common-mode transient immunity: >150 kV/µs
- Default low output
- Internal Miller clamp
- Safety and regulatory approvals (pending)
- UL recognition per UL 1577
- 5 kV rms for 1 minute SOIC long package
- CSA Component Acceptance Notice 5A
- VDE certificate of conformity (pending)
- DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12
- VIORM = 849 V peak
- Wide body, 8-lead SOIC
Product Details
The ADuM4121/ADuM4121-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc.’s iCoupler® technology to provide precision isolation. The ADuM4121/ADuM4121-1 provide 5 kV rms isolation in the wide-body, 8-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers.
The ADuM4121/ADuM4121-1 operate with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM4121/ ADuM4121-1 offer the benefit of true, galvanic isolation between the input and the output.
The ADuM4121/ADuM4121-1 include an internal Miller clamp that activates at 2 V on the falling edge of the gate drive output, supplying the driven gate with a lower impedance path to reduce the chance of Miller capacitance induced turn on.
Options exists to allow the thermal shutdown to be enabled or disabled. As a result, the ADuM4121/ADuM4121-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal oxide semiconductor field, effect transistor (MOSFET) configurations over a wide range of switching voltages.
APPLICATIONS
- Switching power supplies
- Isolated IGBT/MOSFET gate drives
- Industrial inverters
- Gallium nitride (GaN)/silicon carbide (SiC) power devices
Product Categories
Markets and Technologies
Product Lifecycle
Production
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
Evaluation Kits (1)
Documentation & Resources
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Digital Isolation and Interface Technology Selection Guide2/7/2020PDF4 M
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ADI Isolated Gate Drivers and Wolfspeed SiC MOSFETs5/13/2020PDF366 K
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Fundamentals of Isolated Gate Drivers4/22/2022SERIES
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Protect your Innovations: from High Precision to High Power4/12/2022
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Controlling and Driving High Density SiC/GaN Power Conversion3/3/2022
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iCoupler Isolated GaN Half Bridge Inverter3/3/2022
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iCoupler隔离式GaN半桥逆变器3/3/2022
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Verified SiC Converter Solution from Gate Driver to Power MOSFET3/3/2022
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高密度の SiC/GaN による電力変換、それを支える制御/駆動/検出技術3/3/2022
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Isolated Gate Drive Strength - Higher Frequency for Lower Losses3/3/2022
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Control, Drive, Sense, High Density SiC/GaN Power Conversion3/3/2022
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控制、驱动、检测高密度SiC/GaN功率转换3/3/2022
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Peak Current of Isolated Gate Drivers10/2/2020 Analog Dialogue
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Important Characteristics of Insulated Gate Drivers5/1/2019
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IC Ecosystem for Driving Next-Generation SiC/GaN Power Converters10/25/2017
Tools & Simulations
LTspice
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Models for the following parts are available in LTspice:
IBIS Models
Design Resources
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.View our quality and reliability program and certifications for more information.
Part Number | Material Declaration | Reliability Data | Pin/Package Drawing | CAD Symbols, Footprints & 3D Models |
---|---|---|---|---|
ADUM4121ARIZ | Material Declaration | Reliability Data | 8-Lead SOIC (Increased Creepage) | |
ADUM4121ARIZ-RL | Material Declaration | Reliability Data | 8-Lead SOIC (Increased Creepage) | |
ADUM4121BRIZ | Material Declaration | Reliability Data | 8-Lead SOIC (Increased Creepage) | |
ADUM4121BRIZ-RL | Material Declaration | Reliability Data | 8-Lead SOIC (Increased Creepage) | |
ADUM4121CRIZ | Material Declaration | Reliability Data | 8-Lead SOIC (Increased Creepage) | |
ADUM4121CRIZ-RL | Material Declaration | Reliability Data | 8-Lead SOIC (Increased Creepage) | |
Wafer Fabrication Data |
Sample & Buy
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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.