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Overview
Features and Benefits
- 2 A peak output current (<2 Ω RDSON)
- 2.5 V to 6.5 V input
- 4.5 V to 35 V output
- Undervoltage lockout (UVLO) at 2.5 V VDD1
- Multiple UVLO options on VDD2
- Grade A: 4.4 V (typical) UVLO on VDD2
- Grade B: 7.3 V (typical) UVLO on VDD2
- Grade C: 11.3 V (typical) UVLO on VDD2
- Precise timing characteristics
- 53 ns maximum isolator and driver propagation delay
- CMOS input logic levels
- High common-mode transient immunity: >150 kV/µs
- High junction temperature operation: 125°C
- Default low output
- Internal Miller clamp
- Safety and regulatory approvals (pending)
- UL recognition per UL 1577
- 5 kV rms for 1 minute SOIC long package
- CSA Component Acceptance Notice 5A
- VDE certificate of conformity (pending)
- DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12
- VIORM = 849 V peak
- Wide body, 8-lead SOIC
Product Details
The ADuM4121/ADuM4121-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc.’s iCoupler® technology to provide precision isolation. The ADuM4121/ADuM4121-1 provide 5 kV rms isolation in the wide-body, 8-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to alternatives such as the combination of pulse transformers and gate drivers.
The ADuM4121/ADuM4121-1 operate with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers that employ high voltage level translation methodologies, the ADuM4121/ ADuM4121-1 offer the benefit of true, galvanic isolation between the input and the output.
The ADuM4121/ADuM4121-1 include an internal Miller clamp that activates at 2 V on the falling edge of the gate drive output, supplying the driven gate with a lower impedance path to reduce the chance of Miller capacitance induced turn on.
Options exists to allow the thermal shutdown to be enabled or disabled. As a result, the ADuM4121/ADuM4121-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal oxide semiconductor field, effect transistor (MOSFET) configurations over a wide range of switching voltages.
Applications
- Switching power supplies
- Isolated IGBT/MOSFET gate drives
- Industrial inverters
- Gallium nitride (GaN)/silicon carbide (SiC) power devices
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Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Evaluation Kits (1)
Documentation
Tools & Simulations
LTspice
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Models for the following parts are available in LTspice:
IBIS Models
Reference Materials
Safety and Regulatory Compliance (1)
iCoupler Isolated GaN Half Bridge Inverter
Controlling and Driving High Density SiC/GaN Power Conversion
Control, Drive, Sense, High Density SiC/GaN Power Conversion
Technical Articles (1)
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Design Resources
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Sample & Buy
The USA list pricing shown is for BUDGETARY USE ONLY, shown in United States dollars (FOB USA per unit for the stated volume), and is subject to change. International prices may differ due to local duties, taxes, fees and exchange rates. For volume-specific price or delivery quotes, please contact your local Analog Devices, Inc. sales office or authorized distributor. Pricing displayed for Evaluation Boards and Kits is based on 1-piece pricing.
