ADRF5473

RECOMMENDED FOR NEW DESIGNS

Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz

Data Sheet (Rev. 0) Product Selection Table

Part Models: 3
1ku List Price: price unavailable

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Overview

Ultrawideband frequency range: 100 MHz to 40 GHz
Attenuation range: 31.5 dB with 0.5 dB steps
Bond pads for wire bond and ribbon bond
Low insertion loss

1.7 dB typical up to 18 GHz
2.2 dB typical up to 26 GHz
3.2 dB typical up to 40 GHz

Attenuation accuracy

±(0.10 + 2.0% of attenuation state) typical up to 26 GHz
±(0.13 + 1.5% of attenuation state) typical up to 35 GHz
±(0.30 + 1.5% of attenuation state) typical up to 40 GHz

Typical step error

±0.12 dB typical up to 26 GHz
±0.30 dB typical up to 35 GHz
±0.60 dB typical up to 40 GHz

High input linearity

P0.1dB insertion loss state: 31 dBm typical
P0.1dB other attenuation states: 28 dBm typical
IP3: 50 dBm typical

High RF power handling

26 dBm steady state average
31 dBm steady state peak

Tight distribution in relative phase
No low frequency spurious signals
SPI and parallel mode control, CMOS/LVTTL compatible
RF amplitude settling time (0.1 dB of final RF output): 250 ns
18-pad, 3.171 mm × 1.616 mm, die on carrier [CHIP]

The ADRF5473 is a 6-bit digital attenuator with a 31.5 dB attenuation range in 0.5 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized and connected to ground.

This device operates from 100 MHz to 40 GHz with better than 3.2 dB of insertion loss and excellent attenuation accuracy. The ADRF5473 has an RF input power handling capability of 26 dBm average and 31 dBm peak for all states.

The ADRF5473 requires a dual-supply voltage of +3.3 V and −3.3 V. The device features serial peripheral interface (SPI), parallel mode control, and complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5473 is designed to match a characteristic impedance of 50 Ω.

Note that when referring to a single function of a multifunction pad in the data sheet, only the portion of the pad name that is relevant is mentioned. For full pad names of the multifunction pads, refer to the section.

APPLICATIONS

Test and instrumentation

Cellular infrastructure: 5G millimeter wave

Military radios, radars, and electronic counter measures (ECMs)

Microwave radios and very small aperture terminals (VSATs)

Part Models: 3
1ku List Price: price unavailable

Documentation

Data Sheet 1

ADRF5473: Die on Carrier, Silicon Digital Attenuator, 0.5 dB LSB, 6-Bit, 100 MHz to 40 GHz Data Sheet (Rev.0) 12/10/2021

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
ADRF5473BCZ	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
ADRF5473BCZ-GP	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
ADRF5473BCZ-SX	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

S-Parameter 1

ADRF5473 S-parameter

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