Overview

Features and Benefits

  • Ultrawideband frequency range: 100 MHz to 40 GHz
  • Attenuation range: 31.5 dB with 0.5 dB steps
  • Bond pads for wire bond and ribbon bond
  • Low insertion loss
    • 1.7 dB typical up to 18 GHz
    • 2.2 dB typical up to 26 GHz
    • 3.2 dB typical up to 40 GHz
  • Attenuation accuracy
    • ±(0.10 + 2.0% of attenuation state) typical up to 26 GHz
    • ±(0.13 + 1.5% of attenuation state) typical up to 35 GHz
    • ±(0.30 + 1.5% of attenuation state) typical up to 40 GHz
  • Typical step error
    • ±0.12 dB typical up to 26 GHz
    • ±0.30 dB typical up to 35 GHz
    • ±0.60 dB typical up to 40 GHz
  • High input linearity
    • P0.1dB insertion loss state: 31 dBm typical
    • P0.1dB other attenuation states: 28 dBm typical
    • IP3: 50 dBm typical
  • High RF power handling
    • 26 dBm steady state average
    • 31 dBm steady state peak
  • Tight distribution in relative phase
  • No low frequency spurious signals
  • SPI and parallel mode control, CMOS/LVTTL compatible
  • RF amplitude settling time (0.1 dB of final RF output): 250 ns
  • 18-pad, 3.171 mm × 1.616 mm, die on carrier [CHIP]

Product Details

The ADRF5473 is a 6-bit digital attenuator with a 31.5 dB attenuation range in 0.5 dB steps manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized and connected to ground.

This device operates from 100 MHz to 40 GHz with better than 3.2 dB of insertion loss and excellent attenuation accuracy. The ADRF5473 has an RF input power handling capability of 26 dBm average and 31 dBm peak for all states.

The ADRF5473 requires a dual-supply voltage of +3.3 V and −3.3 V. The device features serial peripheral interface (SPI), parallel mode control, and complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5473 is designed to match a characteristic impedance of 50 Ω.

Note that when referring to a single function of a multifunction pad in the data sheet, only the portion of the pad name that is relevant is mentioned. For full pad names of the multifunction pads, refer to the section.

APPLICATIONS

  • Test and instrumentation
  • Cellular infrastructure: 5G millimeter wave
  • Military radios, radars, and electronic counter measures (ECMs)
  • Microwave radios and very small aperture terminals (VSATs)
  • Product Lifecycle icon-recommended Recommended for New Designs

    This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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