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Features and Benefits
- Ultrawideband frequency range: 100 MHz to 60 GHz
- Reflective design
- Bond pads for wire bond and ribbon bond
- Low insertion loss
- 1.0 dB typical up to 18 GHz
- 1.3 dB typical up to 44 GHz
- 1.5 dB typical up to 55 GHz
- High input linearity
- P1dB: 28 dBm typical
- IP3: 50 dBm typical
- High RF power handling
- Through path: 27 dBm up to 40 GHz
- Hot switching: 27 dBm up to 40 GHz
- No low frequency spurious signals
- RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns
- 14-pad, 2.471 mm x 2.571 mm, die on carrier [CHIP]
The ADRF5424 is a reflective, single-pole double-throw (SPDT) switch manufactured in a silicon process attached on a gallium arsenide (GaAs) carrier substrate. The substrate incorporates the bond pads for chip and wire assembly, and the bottom of the device is metalized, connected to ground.
This device operates from 100 MHz to 60 GHz with better than 1.5 dB of insertion loss and 35 dB of isolation at 55 GHz. The ADRF5424 has an RF input power handling capability of 27 dBm up to 40 GHz for both the through path and hot switching.
The ADRF5424 draws a low current of 14 μA on the positive supply of +3.3 V and 120 μA on negative supply of −3.3 V. The device features complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.
The ADRF5424 is designed to match a characteristic impedance of 50 Ω.
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
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