ADRF5422

RECOMMENDED FOR NEW DESIGNS

Die on Carrier, Silicon SPDT Switch, Nonreflective, 100 MHz to 55 GHz

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Part Details

  • Ultrawideband frequency range: 100 MHz to 55 GHz
  • Nonreflective design
  • Low insertion loss
    • 1.3 dB typical to 18 GHz
    • 1.9 dB typical to 40 GHz
    • 2.5 dB typical to 50 GHz
    • 3.6 dB typical to 55 GHz
  • High isolation
    • 43 dB typical to 40 GHz
    • 38 dB typical to 55 GHz
  • High input linearity
    • 0.1 dB power compression (P0.1dB): 31 dBm
    • Third-order intercept (IP3): 53 dBm
  • High power handling at TCASE = 85°C
    • 30 dBm through path
    • 24 dBm terminated path
    • 30 dBm hot switching
  • RF settling time (0.1 dB final RF output): 30 ns
  • No low-frequency spurious signals
  • All-off state control
  • Positive control interface: CMOS-/LVTTL-compatible
  • 15-pad, 3.021 mm × 2.305 mm bare die [CHIP]
ADRF5422
Die on Carrier, Silicon SPDT Switch, Nonreflective, 100 MHz to 55 GHz
ADRF5422 Functional Block Diagram ADRF5422 Pin Configuration ADRF5422 Chip Illustration
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