The ADRF5422 is a nonreflective, SPDT switch manufactured in
the silicon process attached on a gallium arsenide (GaAs) carrier
substrate. The substrate incorporates the bond pads for chip and
wire assembly. The bottom of the device is metalized and connected
to ground.
This device operates from 100 MHz to 55 GHz with a typical
insertion loss of 3.6 dB and isolation of 38 dB at 55 GHz. The
ADRF5422 has an RF input power handling capability of 30 dBm
for the through path, 24 dBm for the terminated path, and 30 dBm
for the hot switching.
The ADRF5422 requires a positive supply of +3.3 V and a negative
supply of −3.3 V. The device employs complementary metal-oxide
semiconductor (CMOS)-/low voltage transistor to transistor logic
(LVTTL)-compatible controls.
The ADRF5422 can operate with a single positive supply voltage
(VDD) applied while the negative supply voltage (VSS) is connected
to ground. In this operating condition, the small signal performance
is maintained while the switching characteristics, linearity, and power
handling performance is derated.
The ADRF5422 is designed to match a characteristic impedance of
50 Ω and can operate from −40°C to +105°C.
APPLICATIONS
- Test and instrumentation
- Cellular infrastructure: 5G millimeterwave (mmW)
- Military radios, radars, and electronic countermeasures (ECMs)
- Microwave radios and very small aperture terminals (VSATs)
- Industrial scanners
