Features and Benefits

  • Reflective design
  • Low Insertion Loss
    • 0.35 dB to 2.8 GHz typical
    • 0.40 dB to 3.8 GHz typical
  • High power handling at TCASE = 105°C
    • Long-term (>10 years) average
      • Continuous wave power: 39 dBm
      • LTE signal
        • Average power: 39 dBm
        • Peak power: 49 dBm
  • High input linearity, IP3: 84 dBm typical
  • ESD ratings
    • HBM: 2000 V, Class 2
    • CDM: 1000 V, Class C3
  • Single-supply operation, integrated NVG
  • Positive control, LVCMOS-/LVTTL- compatible
  • 4 mm x 4 mm, 22-terminal LGA package

Product Details

The ADRF5345 is a high linearity, reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process.

The ADRF5345 operates from 1.8 GHz to 3.8 GHz with a typical insertion loss lower than 0.40 dB and a typical input IP3 of 84 dBm. The device has an RF input power handling capability of 39 dBm for continuous wave signals and 39 dBm average and 49 dBm peak for long-term evolution (LTE) signals.

The ADRF5345 incorporates an integrated negative voltage generator (NVG) to operate with a single positive supply of 5 V (VDD) applied to the VDD pin drawing a 2 mA supply current. The device employs low voltage complementary metal-oxide semiconductor (LVCMOS)-/low voltage transistor to transistor logic (LVTTL)- compatible controls.

The ADRF5345 comes in a 4 mm × 4 mm, 22-terminal, RoHS-compliant, land grid array (LGA) package and operates between −40°C to +105°C.


  • 5G antenna tilting
  • Wireless infrastructure
  • Military and high reliability applications
  • Test equipment
  • Pin diode replacement
  • Product Lifecycle icon-recommended Recommended for New Designs

    This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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