ADRF5132
Info : RECOMMENDED FOR NEW DESIGNS
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ADRF5132

High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz

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1ku List Price Starting From $13.59
Features
  • Reflective, 50 Ω design
  • Low insertion loss: 0.6 dB typical at 2.7 GHz
  • High power handling at TCASE = 105°C
    • Long-term (>10 years operation)
      • Peak power: 43 dBm
      • CW power: 38 dBm
      • LTE power average (8 dB PAR): 35 dBm
  • Single event (<10 sec operation)
    • LTE power average (8 dB PAR): 41 dBm
  • High linearity
    • P0.1dB: 42.5 dBm typical
    • IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz
  • ESD ratings
    • HBM: 2 kV, Class 2
    • CDM: 1.25 kV
  • Single positive supply: 5 V
  • Positive control, CMOS/TTL compatible
  • 16-lead, 3 mm × 3 mm LFCSP package
Additional Details
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The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.

The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.

The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.

Applications

  • Cellular/4G infrastructure
  • Wireless infrastructure
  • Military and high reliability applications
  • Test equipment
  • Pin diode replacement
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file View Data Sheet (Rev.B)
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S-Parameter ADRF5132 S-Parameters Download undefinedB
Part Models 2
1ku List Price Starting From $13.59
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ADRF5132

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Data Sheet

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UPDATED 01/08/2018
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ADRF5132: High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz Data Sheet (Rev.B)

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ADRF5132: 高電力、20 W ピーク、シリコン SPDT、反射スイッチ、0.7 GHZ ～ 5.0 GHZ データシート (Rev.0)

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ADRF5132 Gerber Files redirect icon

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UPDATED 09/01/2018
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ADI’s High Power Silicon Switches Save Bias Power and External Components in Massive MIMO RF Front-End Design redirect icon

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UPDATED 09/01/2018
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ADI 的高功率硅开关可节省大规模 MIMO RF 前端设计中的偏置功率和外部组件 redirect icon

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Massive MIMOのRFフロント・エンドに最適な大電力対応のシリコン・スイッチ、バイアス電力と部品点数の削減に貢献 redirect icon

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Documentation

Product Selection Guide 1

RF, Microwave, and Millimeter Wave Product Selection Guide

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2018-07-02

01:43

High-Power Switches in Silicon (SOI)

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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
ADRF5132BCPZN 16-Lead LFCSP (3mm x 3mm w/ EP) external-link
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ADRF5132BCPZN-R7 16-Lead LFCSP (3mm x 3mm w/ EP) external-link
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May 3, 2018

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ADRF5132 Data Sheet Change for Pin Functions

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Evaluation Kits 1

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EVAL-ADRF5132

ADRF5132 Evaluation Board

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EVAL-ADRF5132

ADRF5132 Evaluation Board

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EVAL-ADRF5132
ADRF5132 Evaluation Board
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Product Detail

The ADRF5132-EVALZ can handle high power levels and temperatures at which the device operates.


The ADRF5132-EVALZ evaluation board is constructed with eight metal layers and dielectrics between each layer. Each metal layer has 1 oz (1.3 mil) copper thickness, whereas the external layers are 1.5 oz.


The top dielectric material is 10 mil Rogers RO4350, which exhibits a very low thermal coefficient, offering control over thermal rise of the board. The dielectrics between other metal layers are FR4. The overall board thickness achieved is 60 mil.

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ADRF5132 Gerber Files Download

4.33 M

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ADRF5132 Evaluation Board

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