Features and Benefits
- Reflective, 50 Ω design
- Low insertion loss: 0.6 dB typical at 2.7 GHz
- High power handling at TCASE = 105°C
- Long-term (>10 years operation)
- Peak power: 43 dBm
- CW power: 38 dBm
- LTE power average (8 dB PAR): 35 dBm
- Long-term (>10 years operation)
- Single event (<10 sec operation)
- LTE power average (8 dB PAR): 41 dBm
- High linearity
- P0.1dB: 42.5 dBm typical
- IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz
- ESD ratings
- HBM: 2 kV, Class 2
- CDM: 1.25 kV
- Single positive supply: 5 V
- Positive control, CMOS/TTL compatible
- 16-lead, 3 mm × 3 mm LFCSP package
The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.
The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.
The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.
- Cellular/4G infrastructure
- Wireless infrastructure
- Military and high reliability applications
- Test equipment
- Pin diode replacement
Markets and Technologies
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Evaluation Kits (1)
The ADRF5132-EVALZ can handle high power levels and temperatures at which the device operates.
The ADRF5132-EVALZ evaluation board is constructed with eight metal layers and dielectrics between each layer. Each metal layer has 1 oz (1.3 mil) copper thickness, whereas the external layers are 1.5 oz.
The top dielectric material is 10 mil Rogers RO4350, which exhibits a very low thermal coefficient, offering control over thermal rise of the board. The dielectrics between other metal layers are FR4. The overall board thickness achieved is 60 mil.
Tools & Simulations
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
The USA list pricing shown is for BUDGETARY USE ONLY, shown in United States dollars (FOB USA per unit for the stated volume), and is subject to change. International prices may differ due to local duties, taxes, fees and exchange rates. For volume-specific price or delivery quotes, please contact your local Analog Devices, Inc. sales office or authorized distributor. Pricing displayed for Evaluation Boards and Kits is based on 1-piece pricing.